HMMDT39467F Datasheet & Equivalents

NPN+PNP SOT-363 General Purpose HXY MOSFET
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
100

Quick Reference

The HMMDT39467F is a NPN+PNP bipolar junction transistor array in a SOT-363 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 40V and continuous collector current of 200mA per channel.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
PolarityNPN+PNPConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)200mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)300MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
LMBT3946DW1T1G NPN+PNP SOT-363 40V 200mA 100 150mW
MMDT3946DW NPN+PNP SOT-363 40V 200mA 100 200mW
MMDT3946 NPN+PNP SOT-363 40V 200mA 40 200mW
TECH PUBLIC ๐Ÿ“„ PDF
MMDT3946 NPN+PNP SOT-363 40V 200mA 200 200mW
MBT3946DW1T1G-HXY NPN+PNP SOT-363 40V 200mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT4146-7-F-HXY NPN+PNP SOT-363 40V 200mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
PMBT3946YPN-HXY NPN+PNP SOT-363 40V 200mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT3946 NPN+PNP SOT-363 40V 200mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT3946 NPN+PNP SOT-363 40V 200mA 300 200mW
MMDT3946 NPN+PNP SOT-363 40V 200mA 300 200mW
MDD(Microdiod... ๐Ÿ“„ PDF
MMDT3946 NPN+PNP SOT-363 40V 200mA 300 200mW
MMDT3946 NPN+PNP SOT-363 40V 200mA 300 200mW
MMDT3946DW NPN+PNP SOT-363 40V 200mA 300 200mW
GOODWORK ๐Ÿ“„ PDF