PJX8603_R1_00001 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOT-563
Logic-Level
PANJIT
Vds Max
60V
Id Max
360mA
Rds(on)
6Ω@10V
Vgs(th)
2.5V
Quick Reference
The PJX8603_R1_00001 is a Dual N/P-Channel in a SOT-563 package, manufactured by PANJIT. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 360mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | PANJIT | Original Manufacturer |
| Package | SOT-563 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 360mA | Max current handling |
| Power Dissipation (Pd) | 300mW | Max thermal limit |
| On-Resistance (Rds(on)) | 6Ω@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 1.1nC@10V | Switching energy |
| Input Capacitance (Ciss) | 51pF | Internal gate capacitance |
| Output Capacitance (Coss) | 15pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMG1029SVQ-7 | Dual N/P-Channel | SOT-563 | 60V;60V | 500mA;360mA | 1.7Ω@10V 3Ω@4.5V 4Ω@10V 6Ω@4.5V |
1V;3V | DIODES 📄 PDF |
| DMC62D2SV-7 | Dual N/P-Channel | SOT-563 | 60V | 480mA | 6Ω@4.5V | 3V | DIODES 📄 PDF |
| DMC62D2SV-13 | Dual N/P-Channel | SOT-563 | 60V | 480mA | 6Ω@4.5V | 3V | DIODES 📄 PDF |