DMG1029SVQ-7 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOT-563
Logic-Level
DIODES
Vds Max
60V;60V
Id Max
500mA;360mA
Rds(on)
1.7Ω@10V;3Ω@4.5V;4Ω@10V;6Ω@4.5V
Vgs(th)
1V;3V
Quick Reference
The DMG1029SVQ-7 is a Dual N/P-Channel in a SOT-563 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 60V;60V and a continuous drain current of 500mA;360mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-563 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V;60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 500mA;360mA | Max current handling |
| Power Dissipation (Pd) | 450mW;1W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.7Ω@10V;3Ω@4.5V;4Ω@10V;6Ω@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V;3V | Voltage required to turn on |
| Gate Charge (Qg) | 300pC@4.5V;280pC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 30pF;25pF | Internal gate capacitance |
| Output Capacitance (Coss) | 4.2pF;4.7pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||