PJT7808_R1_00001 MOSFET Array Datasheet & Equivalents

N-Channel Array SOT-363 Logic-Level PANJIT
Vds Max
20V
Id Max
500mA
Rds(on)
3Ī©@1.2V
Vgs(th)
900mV

Quick Reference

The PJT7808_R1_00001 is a N-Channel Array in a SOT-363 package, manufactured by PANJIT. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 500mA. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerPANJITOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)500mAMax current handling
Power Dissipation (Pd)350mWMax thermal limit
On-Resistance (Rds(on))3Ī©@1.2VResistance when turned fully on
Gate Threshold (Vgs(th))900mVVoltage required to turn on
Gate Charge (Qg)1.4nC@4.5VSwitching energy
Input Capacitance (Ciss)67pFInternal gate capacitance
Output Capacitance (Coss)19pFInternal output capacitance
Operating Temp-55ā„ƒ~+150ā„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
PJT7802-AU_R1_000A1 N-Channel Array SOT-363 20V 500mA 400mΩ@4.5V 1V
SL3134KDW N-Channel Array SOT-363 20V 750mA 400mΩ@2.5V 1.1V
PJT7800_R1_00001 N-Channel Array SOT-363 20V 1A 400mΩ@1.8V 1V
DMN2710UDWQ-7 N-Channel Array SOT-363 20V 800mA 450mΩ@4.5V 1V
DMN2710UDWQ-13 N-Channel Array SOT-363 20V 800mA 600mΩ@2.5V 1V
DMN2710UDW-13 N-Channel Array SOT-363 20V 800mA 600mΩ@2.5V 1V
DMN2710UDW-7 N-Channel Array SOT-363 20V 800mA 600mΩ@2.5V 1V
PJT7802_R1_00001 N-Channel Array SOT-363 20V 500mA 700mΩ@2.5V 1V
PJT7802_S1_00001 N-Channel Array SOT-363 20V 500mA 700mΩ@2.5V 1V
SI3134KDWA-TP N-Channel Array SOT-363 20V 750mA 700mΩ@1.8V 1.1V
PJT7812_R1_00001 N-Channel Array SOT-363 30V 500mA 1.2Ī©@4.5V 1.1V