PJT7812_R1_00001 MOSFET Array Datasheet & Equivalents
N-Channel Array
SOT-363
Logic-Level
PANJIT
Vds Max
30V
Id Max
500mA
Rds(on)
1.2ฮฉ@4.5V
Vgs(th)
1.1V
Quick Reference
The PJT7812_R1_00001 is a N-Channel Array in a SOT-363 package, manufactured by PANJIT. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 500mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | PANJIT | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 500mA | Max current handling |
| Power Dissipation (Pd) | 350mW | Max thermal limit |
| On-Resistance (Rds(on)) | 1.2ฮฉ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.1V | Voltage required to turn on |
| Gate Charge (Qg) | 870pC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 34pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMN32D4SDW-13 | N-Channel Array | SOT-363 | 30V | 650mA | 700mฮฉ@4.5V | 1.6V | DIODES ๐ PDF |
| DMN3401LDWQ-13 | N-Channel Array | SOT-363 | 30V | 800mA | 700mฮฉ@4.5V | 1.6V | DIODES ๐ PDF |
| DMN3401LDW-13 | N-Channel Array | SOT-363 | 30V | 800mA | 700mฮฉ@4.5V | 1.6V | DIODES ๐ PDF |
| UM6K1NA-TP | N-Channel Array | SOT-363 | 30V | 500mA | - | 1.5V | MCC ๐ PDF |