PJT138K-AU_R1_000A1 MOSFET Array Datasheet & Equivalents

N-Channel Array SOT-363 Logic-Level PANJIT
Vds Max
50V
Id Max
360mA
Rds(on)
4.5ฮฉ@2.5V
Vgs(th)
1.5V

Quick Reference

The PJT138K-AU_R1_000A1 is a N-Channel Array in a SOT-363 package, manufactured by PANJIT. Each channel supports a drain-source breakdown voltage of 50V and a continuous drain current of 360mA. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerPANJITOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)50VMax breakdown voltage
Continuous Drain Current (Id)360mAMax current handling
Power Dissipation (Pd)236mWMax thermal limit
On-Resistance (Rds(on))4.5ฮฉ@2.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)1nC@4.5VSwitching energy
Input Capacitance (Ciss)50pFInternal gate capacitance
Output Capacitance (Coss)20pFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
PJT7838_R1_00001 N-Channel Array SOT-363 50V 400mA 1.45ฮฉ@10V 1V
DMN53D0LDW-13 N-Channel Array SOT-363 50V 360mA 2.5ฮฉ@4.5V 1.5V
DMN53D0LDWQ-7 N-Channel Array SOT-363 50V 460mA 2.5ฮฉ@4.5V 1.5V
DMN53D0LDWQ-13 N-Channel Array SOT-363 50V 460mA 2.5ฮฉ@4.5V 1.5V
PJT138K_R1_00001 N-Channel Array SOT-363 50V 360mA 4.5ฮฉ@2.5V 1.5V