DMN53D0LDW-13 MOSFET Array Datasheet & Equivalents
N-Channel Array
SOT-363
Logic-Level
DIODES
Vds Max
50V
Id Max
360mA
Rds(on)
2.5ฮฉ@4.5V
Vgs(th)
1.5V
Quick Reference
The DMN53D0LDW-13 is a N-Channel Array in a SOT-363 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 50V and a continuous drain current of 360mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 50V | Max breakdown voltage |
| Continuous Drain Current (Id) | 360mA | Max current handling |
| Power Dissipation (Pd) | 310mW | Max thermal limit |
| On-Resistance (Rds(on)) | 2.5ฮฉ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 600pC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 46pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| PJT7838_R1_00001 | N-Channel Array | SOT-363 | 50V | 400mA | 1.45ฮฉ@10V | 1V | PANJIT ๐ PDF |
| DMN53D0LDWQ-7 | N-Channel Array | SOT-363 | 50V | 460mA | 2.5ฮฉ@4.5V | 1.5V | DIODES ๐ PDF |
| DMN53D0LDWQ-13 | N-Channel Array | SOT-363 | 50V | 460mA | 2.5ฮฉ@4.5V | 1.5V | DIODES ๐ PDF |
| PJT138K_R1_00001 | N-Channel Array | SOT-363 | 50V | 360mA | 4.5ฮฉ@2.5V | 1.5V | PANJIT ๐ PDF |
| PJT138K-AU_R1_000A1 | N-Channel Array | SOT-363 | 50V | 360mA | 4.5ฮฉ@2.5V | 1.5V | PANJIT ๐ PDF |