PHC21025,118 MOSFET Array Datasheet & Equivalents

Dual N/P-Channel - Logic-Level NXP
Vds Max
30V
Id Max
3.5A
Rds(on)
250mΩ@10V
Vgs(th)
2.8V

Quick Reference

The PHC21025,118 is a Dual N/P-Channel in a - package, manufactured by NXP. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 3.5A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNXPOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)3.5AMax current handling
Power Dissipation (Pd)1WMax thermal limit
On-Resistance (Rds(on))250mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.8VVoltage required to turn on
Gate Charge (Qg)30nC@10VSwitching energy
Input Capacitance (Ciss)250pFInternal gate capacitance
Output Capacitance (Coss)140pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SQJ504EP-T1_BE3 Dual N/P-Channel - 40V 30A 17mΩ@10V 2.5V
VISHAY 📄 PDF
UT6MB5TCR Dual N/P-Channel - 40V 5A 122mΩ@10V 2.5V
SQJ560EP-T1_BE3 Dual N/P-Channel - 60V 30A 107.2mΩ@10V 2.5V
VISHAY 📄 PDF
UT6MC5TCR Dual N/P-Channel - 60V 3.5A 280mΩ@10V 2.5V