UT6MC5TCR MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
-
Logic-Level
ROHM
Vds Max
60V
Id Max
3.5A
Rds(on)
280mΩ@10V
Vgs(th)
2.5V
Quick Reference
The UT6MC5TCR is a Dual N/P-Channel in a - package, manufactured by ROHM. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 3.5A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3.5A | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| On-Resistance (Rds(on)) | 280mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 3.1nC@10V;6.3nC@10V | Switching energy |
| Input Capacitance (Ciss) | 135pF;265pF | Internal gate capacitance |
| Output Capacitance (Coss) | 38pF;18pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SQJ560EP-T1_BE3 | Dual N/P-Channel | - | 60V | 30A | 107.2mΩ@10V | 2.5V | VISHAY 📄 PDF |