PGT08N033H MOSFET Datasheet & Specifications
N-Channel
TOLL-8L
Logic-Level
HT(Shenzhen Jinyu Semicon)
Vds Max
80V
Id Max
200A
Rds(on)
2.1mΩ@10V
Vgs(th)
2V;4V
Quick Reference
The PGT08N033H is an N-Channel MOSFET in a TOLL-8L package, manufactured by HT(Shenzhen Jinyu Semicon). It supports a drain-source breakdown voltage of 80V and a continuous drain current of 200A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HT(Shenzhen Jinyu Semicon) | Original Manufacturer |
| Package | TOLL-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 80V | Max breakdown voltage |
| Continuous Drain Current (Id) | 200A | Max current handling |
| Power Dissipation (Pd) | 268W | Max thermal limit |
| On-Resistance (Rds(on)) | 2.1mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V;4V | Voltage required to turn on |
| Gate Charge (Qg) | 91nC@10V | Switching energy |
| Input Capacitance (Ciss) | 6.2nF | Internal gate capacitance |
| Output Capacitance (Coss) | 3.5nF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MPT023N10-T | N-Channel | TOLL-8L | 100V | 360A | 1.8mΩ@10V | 1.8V | Minos 📄 PDF |