MPT023N10-T MOSFET Datasheet & Specifications

N-Channel TOLL-8L Logic-Level Minos
Vds Max
100V
Id Max
360A
Rds(on)
1.8mΩ@10V
Vgs(th)
1.8V

Quick Reference

The MPT023N10-T is an N-Channel MOSFET in a TOLL-8L package, manufactured by Minos. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 360A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerMinosOriginal Manufacturer
PackageTOLL-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)360AMax current handling
Power Dissipation (Pd)416.6WMax thermal limit
On-Resistance (Rds(on))1.8mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.8VVoltage required to turn on
Gate Charge (Qg)224nC@10VSwitching energy
Input Capacitance (Ciss)11.26nFInternal gate capacitance
Output Capacitance (Coss)1.715nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.