PGN06P420 MOSFET Datasheet & Specifications
P-Channel
PDFN-8L(5x6)
Logic-Level
HT(Shenzhen Jinyu Semicon)
Vds Max
60V
Id Max
25A
Rds(on)
35mΩ@10V;46mΩ@4.5V
Vgs(th)
2V
Quick Reference
The PGN06P420 is an P-Channel MOSFET in a PDFN-8L(5x6) package, manufactured by HT(Shenzhen Jinyu Semicon). It supports a drain-source breakdown voltage of 60V and a continuous drain current of 25A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HT(Shenzhen Jinyu Semicon) | Original Manufacturer |
| Package | PDFN-8L(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 25A | Max current handling |
| Power Dissipation (Pd) | 35W | Max thermal limit |
| On-Resistance (Rds(on)) | 35mΩ@10V;46mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 12.8nC@10V | Switching energy |
| Input Capacitance (Ciss) | 946pF | Internal gate capacitance |
| Output Capacitance (Coss) | 188pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| XR80P06F | P-Channel | PDFN-8L(5x6) | 60V | 80A | 10mΩ@10V | 1.6V | XNRUSEMI 📄 PDF |
| XR60P06F | P-Channel | PDFN-8L(5x6) | 60V | 60A | 10.5mΩ@10V | 1.6V | XNRUSEMI 📄 PDF |
| XRS60P06F | P-Channel | PDFN-8L(5x6) | 60V | 60A | 16mΩ@10V | 2.3V | XNRUSEMI 📄 PDF |
| XR50P06F | P-Channel | PDFN-8L(5x6) | 60V | 50A | 16.8mΩ@10V | 1.6V | XNRUSEMI 📄 PDF |
| XRS30P06F | P-Channel | PDFN-8L(5x6) | 60V | 30A | 50mΩ@4.5V | 2.3V | XNRUSEMI 📄 PDF |
| XR30P10F | P-Channel | PDFN-8L(5x6) | 100V | 30A | 38mΩ@10V | 1.6V | XNRUSEMI 📄 PDF |