XR60P06F MOSFET Datasheet & Specifications
P-Channel
PDFN-8L(5x6)
Logic-Level
XNRUSEMI
Vds Max
60V
Id Max
60A
Rds(on)
10.5mΩ@10V
Vgs(th)
1.6V
Quick Reference
The XR60P06F is an P-Channel MOSFET in a PDFN-8L(5x6) package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 60A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | XNRUSEMI | Original Manufacturer |
| Package | PDFN-8L(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 60A | Max current handling |
| Power Dissipation (Pd) | 89.3W | Max thermal limit |
| On-Resistance (Rds(on)) | 10.5mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.6V | Voltage required to turn on |
| Gate Charge (Qg) | 96.6nC@30V | Switching energy |
| Input Capacitance (Ciss) | 4.61nF | Internal gate capacitance |
| Output Capacitance (Coss) | 266pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |