PBSS5350T,215-JSM Datasheet & Equivalents
PNP
SOT-23
General Purpose
JSMSEMI
VCEO
50V
Ic Max
2A
Pd Max
1.2W
hFE Gain
200
Quick Reference
The PBSS5350T,215-JSM is a PNP bipolar junction transistor in a SOT-23 package, manufactured by JSMSEMI. It supports a breakdown voltage of 50V and continuous collector current of 2A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 50V | Max breakdown voltage |
| Collector Current (Ic) | 2A | Max current handling |
| Power Dissipation (Pd) | 1.2W | Max thermal limit |
| DC Current Gain (hFE) | 200 | Base signal amplification ratio |
| Transition Frequency (fT) | 100MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 320mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 50uA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| PBSS5350T-GK | PNP | SOT-23 | 50V | 2A | - | 300mW | GOODWORK 📄 PDF |
| ZXTP2025FTA | PNP | SOT-23 | 50V | 5A | 560 | 1.2W | DIODES 📄 PDF |
| NSV60200LT1G | PNP | SOT-23 | 60V | 2A | 150 | 540mW | onsemi 📄 PDF |
| ZXTP25060BFHTA | PNP | SOT-23 | 60V | 3A | 75 | 1.25W | DIODES 📄 PDF |
| ZXTP25100BFHTA | PNP | SOT-23 | 100V | 2A | 55 | 1.25W | DIODES 📄 PDF |
| NSS1C200LT1G | PNP | SOT-23 | 100V | 2A | 360 | 710mW | onsemi 📄 PDF |
| ZXTP2029FTA | PNP | SOT-23 | 100V | 3A | 100 | 1.56W | DIODES 📄 PDF |