NSV60200LT1G Datasheet & Equivalents
PNP
SOT-23
General Purpose
onsemi
VCEO
60V
Ic Max
2A
Pd Max
540mW
hFE Gain
150
Quick Reference
The NSV60200LT1G is a PNP bipolar junction transistor in a SOT-23 package, manufactured by onsemi. It supports a breakdown voltage of 60V and continuous collector current of 2A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 60V | Max breakdown voltage |
| Collector Current (Ic) | 2A | Max current handling |
| Power Dissipation (Pd) | 540mW | Max thermal limit |
| DC Current Gain (hFE) | 150 | Base signal amplification ratio |
| Transition Frequency (fT) | 100MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 95mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ZXTP25060BFHTA | PNP | SOT-23 | 60V | 3A | 75 | 1.25W | DIODES 📄 PDF |
| ZXTP25100BFHTA | PNP | SOT-23 | 100V | 2A | 55 | 1.25W | DIODES 📄 PDF |
| NSS1C200LT1G | PNP | SOT-23 | 100V | 2A | 360 | 710mW | onsemi 📄 PDF |
| ZXTP2029FTA | PNP | SOT-23 | 100V | 3A | 100 | 1.56W | DIODES 📄 PDF |
| S-LBSS5240LT1G | PNP | SOT-23 | 140V | 2A | 300 | 300mW | LRC 📄 PDF |