NTMFS5C670NLT1G(ES) MOSFET Datasheet & Specifications

N-Channel PDFN5x6-8L Logic-Level ElecSuper
Vds Max
60V
Id Max
80A
Rds(on)
9mΩ@10V
Vgs(th)
2.2V

Quick Reference

The NTMFS5C670NLT1G(ES) is an N-Channel MOSFET in a PDFN5x6-8L package, manufactured by ElecSuper. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 80A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerElecSuperOriginal Manufacturer
PackagePDFN5x6-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)80AMax current handling
Power Dissipation (Pd)65.7WMax thermal limit
On-Resistance (Rds(on))9mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.2VVoltage required to turn on
Gate Charge (Qg)98nC@10VSwitching energy
Input Capacitance (Ciss)4.765nFInternal gate capacitance
Output Capacitance (Coss)277pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
FH3406GS N-Channel PDFN5x6-8L 60V 140A 2.1mΩ@10V 1V
XIN FEI HONG 📄 PDF
YFW80N06NF N-Channel PDFN5x6-8L 60V 80A 10mΩ@4.5V 2.5V
FH4008GS N-Channel PDFN5x6-8L 85V 110A 2.8mΩ 2V
XIN FEI HONG 📄 PDF
S130N10LF N-Channel PDFN5x6-8L 100V 130A 4.5mΩ@10V 2.5V
ESAC80SN10 N-Channel PDFN5x6-8L 100V 92A 10mΩ@4.5V 2.6V
ElecSuper 📄 PDF