ESAC80SN10 MOSFET Datasheet & Specifications
N-Channel
PDFN5x6-8L
Logic-Level
ElecSuper
Vds Max
100V
Id Max
92A
Rds(on)
10mΩ@4.5V
Vgs(th)
2.6V
Quick Reference
The ESAC80SN10 is an N-Channel MOSFET in a PDFN5x6-8L package, manufactured by ElecSuper. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 92A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ElecSuper | Original Manufacturer |
| Package | PDFN5x6-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 92A | Max current handling |
| Power Dissipation (Pd) | 125W | Max thermal limit |
| On-Resistance (Rds(on)) | 10mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.6V | Voltage required to turn on |
| Gate Charge (Qg) | 45nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.37nF | Internal gate capacitance |
| Output Capacitance (Coss) | 910pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |