NTJD4105CT1G MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOT-363
Logic-Level
onsemi
Vds Max
20V
Id Max
910mA
Rds(on)
360mΩ@2.5V
Vgs(th)
2.1V
Quick Reference
The NTJD4105CT1G is a Dual N/P-Channel in a SOT-363 package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 910mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 910mA | Max current handling |
| Power Dissipation (Pd) | 550mW | Max thermal limit |
| On-Resistance (Rds(on)) | 360mΩ@2.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.1V | Voltage required to turn on |
| Gate Charge (Qg) | 4nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 225pF | Internal gate capacitance |
| Output Capacitance (Coss) | 55pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI2429DW-TP | Dual N/P-Channel | SOT-363 | 20V | 1.5A | 260mΩ@1.8V | 1.1V | MCC 📄 PDF |
| PJT7600_R1_00001 | Dual N/P-Channel | SOT-363 | 20V | 1A | 325mΩ@4.5V | 1V | PANJIT 📄 PDF |
| DMG1016UDW-7 | Dual N/P-Channel | SOT-363 | 20V | 1.066A | 750mΩ@4.5V | 1V | DIODES 📄 PDF |
| BSD235CH6327 | Dual N/P-Channel | SOT-363 | 20V | 950mA | 1.2Ω@4.5V | 1.2V | Infineon 📄 PDF |