NTE194-HXY Transistor Datasheet & Specifications

NPN BJT | HXY MOSFET

NPNTO-92General Purpose
VCEO
-
Ic Max
160V
Pd Max
600mA
Gain
-55โ„ƒ~+150โ„ƒ

Quick Reference

The NTE194-HXY is a NPN bipolar transistor in a TO-92 package. This datasheet provides complete specifications including - breakdown voltage and 160V continuous collector current. Download the NTE194-HXY datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-92Physical mounting
VCEO-Breakdown voltage
IC Max160VCollector current
Pd Max600mAPower dissipation
Gain-55โ„ƒ~+150โ„ƒDC current gain
Frequency-Transition speed
VCEsat300MHzSaturation voltage
Vebo-Emitter-Base voltage
Temp625mWOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
S9013NPNSOT-2330V500mA300mW
BC337-25BKNPNTO-92-45V800mA
BC547NPNTO-92-45V-
2N5550TFR-HXYNPNTO-92-160V-