2N5550TFR-HXY Transistor Datasheet & Specifications
NPNTO-92General Purpose
VCEO
-
Ic Max
160V
Pd Max
-
Gain
-
Quick Reference
The 2N5550TFR-HXY is a NPN bipolar transistor in a TO-92 package. This datasheet provides complete specifications including - breakdown voltage and 160V continuous collector current. Download the 2N5550TFR-HXY datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| VCEO | - | Breakdown voltage |
| IC Max | 160V | Collector current |
| Pd Max | - | Power dissipation |
| Gain | - | DC current gain |
| Frequency | 625mW | Transition speed |
| VCEsat | 200 | Saturation voltage |
| Vebo | 300MHz | Emitter-Base voltage |
| Temp | 600mA | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| S9013 | NPN | SOT-23 | 30V | 500mA | 300mW |
| BC337-25BK | NPN | TO-92 | - | 45V | 800mA |
| BC547 | NPN | TO-92 | - | 45V | - |
| NTE194-HXY | NPN | TO-92 | - | 160V | 600mA |