NTD3055-094T4G MOSFET Datasheet & Specifications

N-Channel DPAK Standard Power onsemi
Vds Max
60V
Id Max
12A
Rds(on)
94mΩ@10V
Vgs(th)
4V

Quick Reference

The NTD3055-094T4G is an N-Channel MOSFET in a DPAK package, manufactured by onsemi. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 12A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageDPAKPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)12AMax current handling
Power Dissipation (Pd)48WMax thermal limit
On-Resistance (Rds(on))94mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)20nC@10VSwitching energy
Input Capacitance (Ciss)450pFInternal gate capacitance
Output Capacitance (Coss)150pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
NVD5C684NLT4G N-Channel DPAK 60V 38A 16.5mΩ@10V
24.3mΩ@4.5V
2.1V
onsemi 📄 PDF
NTD5865NLT4G N-Channel DPAK 60V 46A 19mΩ@4.5V 2V
onsemi 📄 PDF
NTD3055L104T4G N-Channel DPAK 60V 12A 104mΩ@5V 2V
onsemi 📄 PDF
STD80N10F7 N-Channel DPAK 100V 70A 10mΩ@10V 4.5V
FQD19N10LTM N-Channel DPAK 100V 15.6A 100mΩ@10V 2V
onsemi 📄 PDF
FQD16N25CTM N-Channel DPAK 250V 16A 270mΩ@10V 4V
onsemi 📄 PDF
STD16N60M2 N-Channel DPAK 600V 12A 320mΩ@10V 4V
NTD250N65S3H N-Channel DPAK 650V 13A 250mΩ@10V 4V
onsemi 📄 PDF