FQD19N10LTM MOSFET Datasheet & Specifications
N-Channel
DPAK
Logic-Level
onsemi
Vds Max
100V
Id Max
15.6A
Rds(on)
100mΩ@10V
Vgs(th)
2V
Quick Reference
The FQD19N10LTM is an N-Channel MOSFET in a DPAK package, manufactured by onsemi. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 15.6A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 15.6A | Max current handling |
| Power Dissipation (Pd) | 50W | Max thermal limit |
| On-Resistance (Rds(on)) | 100mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 18nC@5V | Switching energy |
| Input Capacitance (Ciss) | 870pF | Internal gate capacitance |
| Output Capacitance (Coss) | 210pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||