NSV1C301ET4G Transistor Datasheet & Specifications
NPNDPAK-3General Purpose
VCEO
100V
Ic Max
3A
Pd Max
2.1W
Gain
200
Quick Reference
The NSV1C301ET4G is a NPN bipolar transistor in a DPAK-3 package. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the NSV1C301ET4G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK-3 | Physical mounting |
| VCEO | 100V | Breakdown voltage |
| IC Max | 3A | Collector current |
| Pd Max | 2.1W | Power dissipation |
| Gain | 200 | DC current gain |
| Frequency | 120MHz | Transition speed |
| VCEsat | 250mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Temp | -65℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD31C-13 | NPN | DPAK-3 | 100V | 3A | 15W |