MJD31C-13 Transistor Datasheet & Specifications

NPN BJT | DIODES

NPNDPAK-3General Purpose
VCEO
100V
Ic Max
3A
Pd Max
15W
Gain
25

Quick Reference

The MJD31C-13 is a NPN bipolar transistor in a DPAK-3 package. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the MJD31C-13 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageDPAK-3Physical mounting
VCEO100VBreakdown voltage
IC Max3ACollector current
Pd Max15WPower dissipation
Gain25DC current gain
Frequency3MHzTransition speed
VCEsat1.2VSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
NSV1C301ET4GNPNDPAK-3100V3A2.1W