NSS1C200LT1G Transistor Datasheet & Specifications

PNP BJT | onsemi

PNPSOT-23General Purpose
VCEO
100V
Ic Max
2A
Pd Max
710mW
Gain
360
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Quick Reference

The NSS1C200LT1G is a PNP bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 100V breakdown voltage and 2A continuous collector current. Download the NSS1C200LT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO100VBreakdown voltage
IC Max2ACollector current
Pd Max710mWPower dissipation
Gain360DC current gain
Frequency120MHzTransition speed
VCEsat115mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
ZXTP25100BFHTAPNPSOT-23100V2A1.25W
MMBTA56-7-FPNPSOT-2380V500mA350mW
SMMBTA56LT1GPNPSOT-2380V500mA300mW
MMBTA56LT3GPNPSOT-2380V500mA225mW
SMMBTA56LT3GPNPSOT-2380V500mA300mW
PMBTA56-HXYPNPSOT-2380V500mA225mW
MMBTA56LT1GPNPSOT-2380V500mA225mW
CMPTA56-HXYPNPSOT-2380V500mA225mW
FMMTA56TA-HXYPNPSOT-2380V500mA225mW
MMBTA56PNPSOT-2380V500mA300mW
View all SOT-23 PNP Transistors ›