MMBTA56LT3G Transistor Datasheet & Specifications

PNP BJT | onsemi

PNPSOT-23General Purpose
VCEO
80V
Ic Max
500mA
Pd Max
225mW
Gain
100
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Quick Reference

The MMBTA56LT3G is a PNP bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 80V breakdown voltage and 500mA continuous collector current. Download the MMBTA56LT3G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO80VBreakdown voltage
IC Max500mACollector current
Pd Max225mWPower dissipation
Gain100DC current gain
Frequency50MHzTransition speed
VCEsat250mVSaturation voltage
Vebo4VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-FPNPSOT-2360V600mA350mW
BC856ALT1GPNPSOT-2365V100mA225mW
ZXTP25100BFHTAPNPSOT-23100V2A1.25W
LBC856BLT1GPNPSOT-2365V100mA225mW
MMBT2907APNPSOT-2360V600mA250mW
MMBT2907APNPSOT-2360V600mA250mW
FMMT591TAPNPSOT-2360V1A500mW
MMBT2907ALT1HTSA1PNPSOT-2360V600mA330mW
MMBTA56-7-FPNPSOT-2380V500mA350mW
View all SOT-23 PNP Transistors ›