NJVNJD2873T4G Transistor Datasheet & Specifications
NPNDPAKGeneral Purpose
VCEO
50V
Ic Max
2A
Pd Max
15W
Gain
120
Quick Reference
The NJVNJD2873T4G is a NPN bipolar transistor in a DPAK package. This datasheet provides complete specifications including 50V breakdown voltage and 2A continuous collector current. Download the NJVNJD2873T4G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK | Physical mounting |
| VCEO | 50V | Breakdown voltage |
| IC Max | 2A | Collector current |
| Pd Max | 15W | Power dissipation |
| Gain | 120 | DC current gain |
| Frequency | 65MHz | Transition speed |
| VCEsat | 300mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | -65℃~+175℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| NJVMJD31T4G | NPN | DPAK | 40V | 3A | 15W |
| MJD2873-QJ | NPN | DPAK | 50V | 2A | 1.6W |