NJVMJD31T4G Transistor Datasheet & Specifications
NPNDPAKGeneral Purpose
VCEO
40V
Ic Max
3A
Pd Max
15W
Gain
25
Quick Reference
The NJVMJD31T4G is a NPN bipolar transistor in a DPAK package. This datasheet provides complete specifications including 40V breakdown voltage and 3A continuous collector current. Download the NJVMJD31T4G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK | Physical mounting |
| VCEO | 40V | Breakdown voltage |
| IC Max | 3A | Collector current |
| Pd Max | 15W | Power dissipation |
| Gain | 25 | DC current gain |
| Frequency | 3MHz | Transition speed |
| VCEsat | 1.2V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | -65℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| NJVNJD2873T4G | NPN | DPAK | 50V | 2A | 15W |
| MJD2873-QJ | NPN | DPAK | 50V | 2A | 1.6W |