NJVMJD44H11T4G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNDPAKGeneral Purpose
VCEO
80V
Ic Max
8A
Pd Max
20W
Gain
40

Quick Reference

The NJVMJD44H11T4G is a NPN bipolar transistor in a DPAK package. This datasheet provides complete specifications including 80V breakdown voltage and 8A continuous collector current. Download the NJVMJD44H11T4G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageDPAKPhysical mounting
VCEO80VBreakdown voltage
IC Max8ACollector current
Pd Max20WPower dissipation
Gain40DC current gain
Frequency85MHzTransition speed
VCEsat1VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MJD31CAJNPNDPAK100V3A15W
NJVMJD122T4GNPNDPAK100V8A1.75W
MJD112-1GNPNDPAK100V2A1.75W
MJD44H11T4NPNDPAK80V8A20W
MJD41CJNPNDPAK100V6A15W
MJD44H11ANPNDPAK80V8A20W