NJVMJD122T4G Transistor Datasheet & Specifications
NPNDPAKGeneral Purpose
VCEO
100V
Ic Max
8A
Pd Max
1.75W
Gain
1000
Quick Reference
The NJVMJD122T4G is a NPN bipolar transistor in a DPAK package. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the NJVMJD122T4G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK | Physical mounting |
| VCEO | 100V | Breakdown voltage |
| IC Max | 8A | Collector current |
| Pd Max | 1.75W | Power dissipation |
| Gain | 1000 | DC current gain |
| Frequency | 4MHz | Transition speed |
| VCEsat | 4V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Temp | -65℃~+150℃@(Tj) | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| NJVMJD44H11T4G | NPN | DPAK | 80V | 8A | 20W |
| MJD31CAJ | NPN | DPAK | 100V | 3A | 15W |
| MJD112-1G | NPN | DPAK | 100V | 2A | 1.75W |
| MJD44H11T4 | NPN | DPAK | 80V | 8A | 20W |
| MJD41CJ | NPN | DPAK | 100V | 6A | 15W |
| MJD44H11A | NPN | DPAK | 80V | 8A | 20W |