NCE60P12K MOSFET Datasheet & Specifications

P-Channel TO-252-2L Logic-Level NCE
Vds Max
60V
Id Max
12A
Rds(on)
100mΩ@10V
Vgs(th)
2.2V

Quick Reference

The NCE60P12K is an P-Channel MOSFET in a TO-252-2L package, manufactured by NCE. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 12A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerNCEOriginal Manufacturer
PackageTO-252-2LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)12AMax current handling
Power Dissipation (Pd)60WMax thermal limit
On-Resistance (Rds(on))100mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.2VVoltage required to turn on
Gate Charge (Qg)37.6nCSwitching energy
Input Capacitance (Ciss)1.6307nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
WSF85P06 P-Channel TO-252-2L 60V 85A 12.5mΩ@10V 2V
Winsok Semicon 📄 PDF
AOD409(XBLW) P-Channel TO-252-2L 60V 50A 24mΩ@10V 2.5V
IRFR5305TRPBF(XBLW) P-Channel TO-252-2L 60V 20A 72mΩ@10V 2.5V
HSU8119 P-Channel TO-252-2L 80V 70A 17mΩ@4.5V 1.8V
HUASHUO 📄 PDF
CJU30P10 P-Channel TO-252-2L 100V 30A 55mΩ@4.5V 2.5V
NCE01P30K P-Channel TO-252-2L 100V 30A 65mΩ@4.5V 2.5V