NCE01P30K MOSFET Datasheet & Specifications
P-Channel
TO-252-2L
Logic-Level
NCE
Vds Max
100V
Id Max
30A
Rds(on)
65mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The NCE01P30K is an P-Channel MOSFET in a TO-252-2L package, manufactured by NCE. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 30A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | NCE | Original Manufacturer |
| Package | TO-252-2L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 30A | Max current handling |
| Power Dissipation (Pd) | 120W | Max thermal limit |
| On-Resistance (Rds(on)) | 65mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 136nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.81nF | Internal gate capacitance |
| Output Capacitance (Coss) | 93pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |