NCE55P30K MOSFET Datasheet & Specifications
P-Channel
TO-252-2L
Standard Power
NCE
Vds Max
55V
Id Max
30A
Rds(on)
40mΩ@10V
Vgs(th)
4V
Quick Reference
The NCE55P30K is an P-Channel MOSFET in a TO-252-2L package, manufactured by NCE. It supports a drain-source breakdown voltage of 55V and a continuous drain current of 30A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | NCE | Original Manufacturer |
| Package | TO-252-2L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 55V | Max breakdown voltage |
| Continuous Drain Current (Id) | 30A | Max current handling |
| Power Dissipation (Pd) | 65W | Max thermal limit |
| On-Resistance (Rds(on)) | 40mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 56nC@10V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| WSF85P06 | P-Channel | TO-252-2L | 60V | 85A | 12.5mΩ@10V | 2V | Winsok Semicon 📄 PDF |
| AOD409(XBLW) | P-Channel | TO-252-2L | 60V | 50A | 24mΩ@10V | 2.5V | XBLW 📄 PDF |
| NCE60P50K | P-Channel | TO-252-2L | 60V | 50A | 28mΩ@10V | 3.5V | NCE 📄 PDF |
| HYG210P06LQ1D | P-Channel | TO-252-2L | 60V | 40A | 32mΩ@4.5V | 3V | HUAYI 📄 PDF |
| HSU8119 | P-Channel | TO-252-2L | 80V | 70A | 17mΩ@4.5V | 1.8V | HUASHUO 📄 PDF |
| CJU30P10 | P-Channel | TO-252-2L | 100V | 30A | 55mΩ@4.5V | 2.5V | JSCJ 📄 PDF |
| NCE01P30K | P-Channel | TO-252-2L | 100V | 30A | 65mΩ@4.5V | 2.5V | NCE 📄 PDF |