MTI200WX75GD-SMD MOSFET Array Datasheet & Equivalents
N-Channel Array
-
Standard Power
Littelfuse/IXYS
Vds Max
75V
Id Max
255A
Rds(on)
1.3mΩ@10V
Vgs(th)
3.8V
Quick Reference
The MTI200WX75GD-SMD is a N-Channel Array in a - package, manufactured by Littelfuse/IXYS. Each channel supports a drain-source breakdown voltage of 75V and a continuous drain current of 255A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Littelfuse/IXYS | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 75V | Max breakdown voltage |
| Continuous Drain Current (Id) | 255A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 1.3mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.8V | Voltage required to turn on |
| Gate Charge (Qg) | 155nC@10V | Switching energy |
| Input Capacitance (Ciss) | 14.4nF | Internal gate capacitance |
| Output Capacitance (Coss) | 3.22nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| APTM10HM05FG | N-Channel Array | - | 100V | 278A | 5mΩ@10V | 4V | MICROCHIP 📄 PDF |
| APTM10DHM05G | N-Channel Array | - | 100V | 278A | 5mΩ@10V | 4V | MICROCHIP 📄 PDF |