MSK30N03DF MOSFET Datasheet & Specifications

N-Channel DFN-8(3.3x3.3) Logic-Level MSKSEMI
Vds Max
30V
Id Max
30A
Rds(on)
9mΩ@10V
Vgs(th)
2.5V

Quick Reference

The MSK30N03DF is an N-Channel MOSFET in a DFN-8(3.3x3.3) package, manufactured by MSKSEMI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 30A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageDFN-8(3.3x3.3)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)30AMax current handling
Power Dissipation (Pd)20WMax thermal limit
On-Resistance (Rds(on))9mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)7.2nC@4.5VSwitching energy
Input Capacitance (Ciss)572pFInternal gate capacitance
Output Capacitance (Coss)81pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
WSD3066DN33 N-Channel DFN-8(3.3x3.3) 30V 50A 5.7mΩ@4.5V 2.5V
Winsok Semicon 📄 PDF
MCG60N06YHE3-TP N-Channel DFN-8(3.3x3.3) 60V 60A 4.6mΩ@10V
6.4mΩ@4.5V
1.6V