MCG60N06YHE3-TP MOSFET Datasheet & Specifications
N-Channel
DFN-8(3.3x3.3)
Logic-Level
MCC
Vds Max
60V
Id Max
60A
Rds(on)
4.6mΩ@10V;6.4mΩ@4.5V
Vgs(th)
1.6V
Quick Reference
The MCG60N06YHE3-TP is an N-Channel MOSFET in a DFN-8(3.3x3.3) package, manufactured by MCC. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 60A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MCC | Original Manufacturer |
| Package | DFN-8(3.3x3.3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 60A | Max current handling |
| Power Dissipation (Pd) | 60W | Max thermal limit |
| On-Resistance (Rds(on)) | 4.6mΩ@10V;6.4mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.6V | Voltage required to turn on |
| Gate Charge (Qg) | 34.5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.666nF | Internal gate capacitance |
| Output Capacitance (Coss) | 500pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||