MMUN5335DW Transistor Datasheet & Specifications

NPN+PNP BJT | YFW

NPN+PNPSOT-363General Purpose
VCEO
50V
Ic Max
100mA
Pd Max
385mW
Gain
140
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Quick Reference

The MMUN5335DW is a NPN+PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 50V breakdown voltage and 100mA continuous collector current. Download the MMUN5335DW datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYFWOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO50VBreakdown voltage
IC Max100mACollector current
Pd Max385mWPower dissipation
Gain140DC current gain
Frequency200mVTransition speed
VCEsat0.047Saturation voltage
Vebo-Emitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMDT3946NPN+PNPSOT-36340V200mA200mW
PMBT3946YPN-HXYNPN+PNPSOT-36340V200mA200mW
MBT3946DW1T1G-HXYNPN+PNPSOT-36340V200mA200mW
MMDT3946NPN+PNPSOT-36340V200mA200mW
MMDT3946NPN+PNPSOT-36340V200mA200mW
HUMZ1NTRNPN+PNPSOT-36350V150mA150mW
MMDT4413NPN+PNPSOT-363-40V600mA
BC847PNNPN+PNPSOT-36345V100mA200mW
UMF28NTRNPN+PNPSOT-36350V150mA150mW
MMDT3946DWNPN+PNPSOT-36340V200mA200mW
View all SOT-363 NPN+PNP Transistors ›