HUMZ1NTR Transistor Datasheet & Specifications

NPN+PNP BJT | HXY MOSFET

NPN+PNPSOT-363General Purpose
VCEO
50V
Ic Max
150mA
Pd Max
150mW
Gain
560
📄 View PDF Datasheet🛒 Buy from LCSC

Quick Reference

The HUMZ1NTR is a NPN+PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the HUMZ1NTR datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO50VBreakdown voltage
IC Max150mACollector current
Pd Max150mWPower dissipation
Gain560DC current gain
Frequency180MHzTransition speed
VCEsat500mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMDT3946NPN+PNPSOT-36340V200mA200mW
PMBT3946YPN-HXYNPN+PNPSOT-36340V200mA200mW
MBT3946DW1T1G-HXYNPN+PNPSOT-36340V200mA200mW
MMDT3946NPN+PNPSOT-36340V200mA200mW
MMDT3946NPN+PNPSOT-36340V200mA200mW
MMDT4413NPN+PNPSOT-363-40V600mA
BC847PNNPN+PNPSOT-36345V100mA200mW
UMF28NTRNPN+PNPSOT-36350V150mA150mW
MMDT3946DWNPN+PNPSOT-36340V200mA200mW
MMDT3946NPN+PNPSOT-36340V200mA200mW
View all SOT-363 NPN+PNP Transistors ›