MMST5401 Datasheet & Equivalents
PNP
SOT-323
General Purpose
MSKSEMI
VCEO
150V
Ic Max
600mA
Pd Max
200mW
hFE Gain
300
Quick Reference
The MMST5401 is a PNP bipolar junction transistor in a SOT-323 package, manufactured by MSKSEMI. It supports a breakdown voltage of 150V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MSKSEMI | Original Manufacturer |
| Package | SOT-323 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 150V | Max breakdown voltage |
| Collector Current (Ic) | 600mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| DC Current Gain (hFE) | 300 | Base signal amplification ratio |
| Transition Frequency (fT) | 100MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BC806-16WF-HXY | PNP | SOT-323 | 150V | 600mA | 300 | 200mW | HXY MOSFET 📄 PDF |
| MMBTA56WT1G-HXY | PNP | SOT-323 | 150V | 600mA | 300 | 200mW | HXY MOSFET 📄 PDF |
| MMSTA56-7-F-HXY | PNP | SOT-323 | 150V | 600mA | 300 | 200mW | HXY MOSFET 📄 PDF |
| NSVMMBT5401WT1G-HXY | PNP | SOT-323 | 150V | 600mA | 300 | 200mW | HXY MOSFET 📄 PDF |
| PMSTA56-HXY | PNP | SOT-323 | 150V | 600mA | 300 | 200mW | HXY MOSFET 📄 PDF |
| SMMBTA56WT3G-HXY | PNP | SOT-323 | 150V | 600mA | 300 | 200mW | HXY MOSFET 📄 PDF |
| MMBT5401W | PNP | SOT-323 | 150V | 600mA | 240 | 200mW | XCH 📄 PDF |
| MMST5401(RANGE:100-300) | PNP | SOT-323 | 150V | 600mA | 100 | 200mW | JSCJ 📄 PDF |