MMBTA56WT1G-HXY Datasheet & Equivalents

PNP SOT-323 General Purpose HXY MOSFET
VCEO
150V
Ic Max
600mA
Pd Max
200mW
hFE Gain
300

Quick Reference

The MMBTA56WT1G-HXY is a PNP bipolar junction transistor in a SOT-323 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 150V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)150VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)300Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current50nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BC806-16WF-HXY PNP SOT-323 150V 600mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMSTA56-7-F-HXY PNP SOT-323 150V 600mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
NSVMMBT5401WT1G-HXY PNP SOT-323 150V 600mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
PMSTA56-HXY PNP SOT-323 150V 600mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
SMMBTA56WT3G-HXY PNP SOT-323 150V 600mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMST5401 PNP SOT-323 150V 600mA 300 200mW
MMST5401 PNP SOT-323 150V 600mA 300 200mW
HT(Shenzhen J... ๐Ÿ“„ PDF
MMBT5401W PNP SOT-323 150V 600mA 240 200mW
MMST5401(RANGE:100-300) PNP SOT-323 150V 600mA 100 200mW