MMBTA64LT1G Datasheet & Equivalents

PNP SOT-23 General Purpose onsemi
VCEO
30V
Ic Max
500mA
Pd Max
225mW
hFE Gain
-

Quick Reference

The MMBTA64LT1G is a PNP bipolar junction transistor in a SOT-23 package, manufactured by onsemi. It supports a breakdown voltage of 30V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)30VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
DC Current Gain (hFE)-Base signal amplification ratio
Transition Frequency (fT)125MHzMax operating frequency
Saturation Voltage (VCEsat)20000@5V,100mAVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒ@(Tj)Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
AD-KSA1182-Y PNP SOT-23 30V 500mA 120 150mW
AD-KTA1505-Y PNP SOT-23 30V 500mA 120 150mW
KTA1505-Y PNP SOT-23 30V 500mA 120 150mW
BLUE ROCKET ๐Ÿ“„ PDF
KTA1505Y PNP SOT-23 30V 500mA 120 150mW
KSA1182 PNP SOT-23 30V 500mA 240 150mW
MMBT9012H PNP SOT-23 30V 500mA 350 200mW
ST(Semtech) ๐Ÿ“„ PDF
KTA1505 PNP SOT-23 30V 500mA 400 150mW
MMBTA63-7-F PNP SOT-23 30V 500mA 10000 300mW
PMBTA64 PNP SOT-23 30V 500mA 20000 250mW
Nexperia ๐Ÿ“„ PDF
215 PNP SOT-23 30V 1A 80 500mW
FMMT589TA PNP SOT-23 30V 1A 100 310mW
MMBT589 PNP SOT-23 30V 1A 150 500mW
FMMT549ATA PNP SOT-23 30V 1A 260 480mW
Nexperia ๐Ÿ“„ PDF
PBSS5130T PNP SOT-23 30V 1A 300 310mW
215 PNP SOT-23 30V 1A 300 310mW
HXY MOSFET ๐Ÿ“„ PDF
MMBT589LT1G PNP SOT-23 30V 1.2A 20000 350mW
PBSS5120T-HXY PNP SOT-23 32V 800mA 82 200mW
BCV26 PNP SOT-23 32V 800mA 82 200mW
2SB1197 PNP SOT-23 32V 800mA 390 200mW
2SB1197-Q PNP SOT-23 40V 500mA 20 225mW