PBSS5120T-HXY Datasheet & Equivalents

PNP SOT-23 General Purpose HXY MOSFET
VCEO
30V
Ic Max
1A
Pd Max
310mW
hFE Gain
300

Quick Reference

The PBSS5120T-HXY is a PNP bipolar junction transistor in a SOT-23 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 30V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)30VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)310mWMax thermal limit
DC Current Gain (hFE)300Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)650mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBT589LT1G PNP SOT-23 30V 1A 300 310mW
PBSS5130T PNP SOT-23 30V 1A 260 480mW
Nexperia ๐Ÿ“„ PDF
215 PNP SOT-23 30V 1A 150 500mW
FMMT549ATA PNP SOT-23 30V 1A 100 310mW
MMBT589 PNP SOT-23 30V 1A 80 500mW
FMMT589TA PNP SOT-23 30V 1.2A 20000 350mW
BCV26 PNP SOT-23 30V 1.5A 270 200mW
2SB1695KT146 PNP SOT-23 40V 1A 300 450mW
Nexperia ๐Ÿ“„ PDF
PBSS5140T PNP SOT-23 40V 1A 300 250mW
Nexperia ๐Ÿ“„ PDF
215 PNP SOT-23 40V 1A 250 500mW
PMMT591A PNP SOT-23 40V 1A 250 350mW
215 PNP SOT-23 40V 1A 100 500mW
FMMT591ATA PNP SOT-23 40V 1.5A 180 806mW
ZXTP2041FTA PNP SOT-23 40V 1.5A 180 806mW
FMMT591 PNP SOT-23 40V 1.5A 180 625mW
FMMT720QTA PNP SOT-23 40V 2A 300 730mW
FMMT720TA PNP SOT-23 40V 2A 210 480mW
Nexperia ๐Ÿ“„ PDF
FMMT720 PNP SOT-23 40V 2A 210 730mW
DSS5240T-7 PNP SOT-23 40V 2A 150 540mW
PBSS5240T PNP SOT-23 40V 2A 100 730mW