MMBTA06LT3G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSOT-23General Purpose
VCEO
80V
Ic Max
500mA
Pd Max
225mW
Gain
100

Quick Reference

The MMBTA06LT3G is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 80V breakdown voltage and 500mA continuous collector current. Download the MMBTA06LT3G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO80VBreakdown voltage
IC Max500mACollector current
Pd Max225mWPower dissipation
Gain100DC current gain
Frequency100MHzTransition speed
VCEsat250mVSaturation voltage
Vebo4VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400)NPNSOT-2360V500mA300mW
ZXTN2020FTANPNSOT-23100V4A1.2W
DNBT8105-7NPNSOT-2360V1A600mW
FMMT415TDNPNSOT-23100V500mA500mW
FMMT493ATANPNSOT-2360V1A500mW
BC846AQ-7-FNPNSOT-2365V100mA310mW
FMMT491TANPNSOT-2360V1A500mW
ZXTN25100DFHTANPNSOT-23100V2.5A1.25W
MMBTA06-7-FNPNSOT-2380V500mA350mW
MMBTA05LT1GNPNSOT-2360V500mA300mW