MMBTA05LT1G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSOT-23General Purpose
VCEO
60V
Ic Max
500mA
Pd Max
300mW
Gain
100

Quick Reference

The MMBTA05LT1G is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 60V breakdown voltage and 500mA continuous collector current. Download the MMBTA05LT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO60VBreakdown voltage
IC Max500mACollector current
Pd Max300mWPower dissipation
Gain100DC current gain
Frequency100MHzTransition speed
VCEsat250mVSaturation voltage
Vebo4VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400)NPNSOT-2360V500mA300mW
BC817-16LT1GNPNSOT-2345V500mA225mW
BC817-40LT1GNPNSOT-2345V500mA225mW
DNBT8105-7NPNSOT-2360V1A600mW
S9014NPNSOT-2345V100mA300mW
FMMT493ATANPNSOT-2360V1A500mW
BC817-40Q-7-FNPNSOT-2345V500mA310mW
BC846AQ-7-FNPNSOT-2365V100mA310mW
BC847B-7-FNPNSOT-2345V100mA300mW