MMBT9013G Transistor Datasheet & Specifications
NPNTO-236General Purpose
VCEO
30V
Ic Max
500mA
Pd Max
200mW
Gain
100
Quick Reference
The MMBT9013G is a NPN bipolar transistor in a TO-236 package. This datasheet provides complete specifications including 30V breakdown voltage and 500mA continuous collector current. Download the MMBT9013G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST(Semtech) | Original Manufacturer |
| Package | TO-236 | Physical mounting |
| VCEO | 30V | Breakdown voltage |
| IC Max | 500mA | Collector current |
| Pd Max | 200mW | Power dissipation |
| Gain | 100 | DC current gain |
| Frequency | 100MHz | Transition speed |
| VCEsat | 600mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | - | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMBT8050C | NPN | TO-236 | 25V | 600mA | 350mW |