MMBT8050C Transistor Datasheet & Specifications

NPN BJT | ST(Semtech)

NPNTO-236General Purpose
VCEO
25V
Ic Max
600mA
Pd Max
350mW
Gain
100

Quick Reference

The MMBT8050C is a NPN bipolar transistor in a TO-236 package. This datasheet provides complete specifications including 25V breakdown voltage and 600mA continuous collector current. Download the MMBT8050C datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerST(Semtech)Original Manufacturer
PackageTO-236Physical mounting
VCEO25VBreakdown voltage
IC Max600mACollector current
Pd Max350mWPower dissipation
Gain100DC current gain
Frequency100MHzTransition speed
VCEsat500mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBT9013GNPNTO-23630V500mA200mW