MMBT5551T Transistor Datasheet & Specifications
NPNSOT-523General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
200mW
Gain
300@10mA,5V
Quick Reference
The MMBT5551T is a NPN bipolar transistor in a SOT-523 package. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the MMBT5551T datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | SOT-523 | Physical mounting |
| VCEO | 160V | Breakdown voltage |
| IC Max | 600mA | Collector current |
| Pd Max | 200mW | Power dissipation |
| Gain | 300@10mA,5V | DC current gain |
| Frequency | 300MHz | Transition speed |
| VCEsat | 150mV | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Temp | -55℃~+150℃@(Tj) | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| HMMBT5551T | NPN | SOT-523 | 160V | 600mA | 300mW |