HMMBT5551T Transistor Datasheet & Specifications
NPNSOT-523General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
300mW
Gain
100
Quick Reference
The HMMBT5551T is a NPN bipolar transistor in a SOT-523 package. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the HMMBT5551T datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-523 | Physical mounting |
| VCEO | 160V | Breakdown voltage |
| IC Max | 600mA | Collector current |
| Pd Max | 300mW | Power dissipation |
| Gain | 100 | DC current gain |
| Frequency | 300MHz | Transition speed |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Temp | - | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMBT5551T | NPN | SOT-523 | 160V | 600mA | 200mW |