MMBT5401LT3G Datasheet & Equivalents

PNP SOT-23 General Purpose onsemi
VCEO
150V
Ic Max
500mA
Pd Max
300mW
hFE Gain
50

Quick Reference

The MMBT5401LT3G is a PNP bipolar junction transistor in a SOT-23 package, manufactured by onsemi. It supports a breakdown voltage of 150V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)150VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)300mWMax thermal limit
DC Current Gain (hFE)50Base signal amplification ratio
Transition Frequency (fT)300MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
LMBT5401LT1G PNP SOT-23 150V 500mA 50 300mW
NSVMMBT5401LT3G PNP SOT-23 150V 500mA 50 300mW
MMBT5401LT1G PNP SOT-23 150V 500mA 60 300mW
MMBT5401 PNP SOT-23 150V 500mA 60 300mW
MMBT5401 PNP SOT-23 150V 500mA 60 300mW
MMBT5401 PNP SOT-23 150V 500mA 100 225mW
S-LMBT5401LT1G PNP SOT-23 150V 500mA 240 300mW
2N5401S-RTK/P PNP SOT-23 150V 600mA 60 350mW
MMBT5401-7-F PNP SOT-23 150V 600mA 60 310mW
2N5401 PNP SOT-23 150V 600mA 80 300mW
GOODWORK ๐Ÿ“„ PDF
MMBT5401 PNP SOT-23 150V 600mA 80 300mW
MMBT5401 PNP SOT-23 150V 600mA 80 300mW
MMBT5401 PNP SOT-23 150V 600mA 80 300mW
MMBT5401(RANGE:100-200) PNP SOT-23 150V 600mA 100 300mW
MMBT5401-TP PNP SOT-23 150V 600mA 100 300mW
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MMBT5401 PNP SOT-23 150V 600mA 100 300mW
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MMBT5401 PNP SOT-23 150V 600mA 100 350mW
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MMBT5401_R1_00101 PNP SOT-23 150V 600mA 240 225mW