MMBT5401 Datasheet & Equivalents

PNP SOT-23 General Purpose UMW
VCEO
150V
Ic Max
600mA
Pd Max
300mW
hFE Gain
80

Quick Reference

The MMBT5401 is a PNP bipolar junction transistor in a SOT-23 package, manufactured by UMW. It supports a breakdown voltage of 150V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUMWOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)150VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)300mWMax thermal limit
DC Current Gain (hFE)80Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2N5401 PNP SOT-23 150V 600mA 80 300mW
GOODWORK ๐Ÿ“„ PDF
2N5401S-RTK/P PNP SOT-23 150V 600mA 60 350mW
MMBT5401(RANGE:100-200) PNP SOT-23 150V 600mA 100 300mW
MMBT5401-7-F PNP SOT-23 150V 600mA 60 310mW
MMBT5401-TP PNP SOT-23 150V 600mA 100 300mW
MMBT5401_R1_00101 PNP SOT-23 150V 600mA 240 225mW
MMBT5401(RANGE:200-300) PNP SOT-23 150V 600mA 300 300mW
MMBT5401LT1G-CN PNP SOT-23 150V 600mA 300 300mW
ChipNobo ๐Ÿ“„ PDF
MMBT5401S PNP SOT-23 150V 600mA 300 300mW
2N5401 PNP SOT-23 150V 600mA 300 300mW
2N5401S PNP SOT-23 150V 600mA 400 300mW
YONGYUTAI ๐Ÿ“„ PDF
PBHV9115T PNP SOT-23 150V 1A 100 300mW
Nexperia ๐Ÿ“„ PDF
215 PNP SOT-23 160V 600mA 100 300mW
BLUE ROCKET ๐Ÿ“„ PDF
MMBT5401-B PNP SOT-23 160V 600mA 300 300mW
TECH PUBLIC ๐Ÿ“„ PDF